Lam Research Corporation
ATOMIC LAYER TREATMENT PROCESS USING METASTABLE ACTIVATED RADICAL SPECIES

Abstract:

A method for treating an exposed surface of a substrate includes purging first and second chambers of a substrate processing system using a purge gas. A gas distribution device is arranged between the first chamber and the second chamber. The method includes flowing a treatment gas to the second chamber but not the first chamber to create an adsorption layer on a surface of a substrate arranged on a substrate support in the second chamber. The method includes stopping flow of the treatment gas to the second chamber. The method includes flowing the purge gas to purge the first chamber and the second chamber. The method includes, while flowing the purge gas to the first chamber, striking plasma in the first chamber to create metastable active radical species and delivering the metastable active radical species through the gas distribution device to the second chamber to surface activate the adsorption layer.