Microsoft Corporation
SELECTIVE AREA GROWTH WITH IMPROVED SELECTIVITY FOR NANOWIRES

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Abstract:

A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than 2 .times. 0 .times. W m * K . ##EQU00001## The nanowire is on the substrate in the opening of the patterned mask layer. By providing the patterned mask layer with a thermal conductivity greater than 2 .times. 0 .times. W m * K , ##EQU00002## the patterned mask layer is able to maintain a temperature of the surface thereof to a desired level when the nanowire is provided. This prevents undesired parasitic growth on the patterned mask layer, thereby improving the performance of the nanowire structure.

Status:
Application
Type:

Utility

Filling date:

25 Feb 2020

Issue date:

26 Aug 2021