Microsoft Corporation
FABRICATION METHOD FOR SEMICONDUCTOR NANOWIRES COUPLED TO A SUPERCONDUCTOR

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Abstract:

There is provided a method for fabricating a device. On a top surface of a substrate, a first layer of a first deposition material is formed. The first layer of the first deposition material is patterned to create a seed pattern of remaining first deposition material. Homoepitaxy is used to grow a second layer of the first deposition material on the seed pattern.

Status:
Application
Type:

Utility

Filling date:

29 Jul 2019

Issue date:

18 Aug 2022