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Test structures and method for electrical measurement of FinFET fin height

Abstract:

Methods of measuring fin height electrically for devices fabricated using FinFET technology are disclosed here. One method uses an interleaving comb-like test structure with no gate. The other method extracts fin height from total gate capacitance from FinFETS with varying gate lengths. When a comb-like structure with no gate is used to measure fin height, if there is another structure with a gate is used, then the gate capacitance may be measured to independently measure thickness of gate dielectric.