Veeco Instruments Inc.
ION BEAM DEPOSITION OF A LOW RESISTIVITY METAL

Abstract:

Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250.degree. C. to produce the metal film. A resulting thin tungsten film has large and highly oriented .alpha.(110) grains having a resistivity less than 9 .mu..OMEGA.-cm and thickness less than 300 .ANG., with no discernable .beta.-phase. A resulting thin ruthenium film has a resistivity less than 10 .mu..OMEGA.-cm and a thickness less than 300 .ANG..